Process Design Engineering Laboratory is dedicated to material development for renewable energy and power conversion systems. III-Nitride semiconductors, such as AlN, GaN, InN and their alloys, are candidate materials for those systems according to their superior material properties. Our laboratory is supporting the device-grade material development from theoretical point of view.
Member
The Main Research Topics
Development of ab initio-based approach: prediction of surface phase diagram
Investigation of impurity incorporation mechanism during semiconductor epitaxy (process informatics)
Process design of III nitride semiconductors